Support - Equipment

高分辨聚焦离子束电子束双束扫描电子显微镜FIB

number
Specifications
Manufacturer 赛默飞(FEI)
model Helios 5 UX
Manufacturing country 美国
Classification number 1
Placement location 郭可信材料表征中心 B130
date of production 2023-08-24
Acquisition Date 2023-08-24
Network access date 1970-01-01

information

reservation
Main specifications and technical indicators

1、二次电子分辨率:≤0.6 nm @ 15kV;≤0.8 nm @ 1kV;
2、加速电压:200 V-30 kV、束流强度:0.8 pA-90 nA;
3、离子源种类:液态Ga离子源;
4、交叉点分辨率:≤4.5 nm @30 kV (多边法),≤2.5 nm @30 kV (选边法);
5、加速电压:0.5 kV - 30 kV、束流强度:1 pA - 60 nA。

Main functions and features

Helios 5 UX可用于金属、半导体、电介质、多层膜结构等固体样品上微纳结构的表征及高质量定点APT、TEM样品制备,化学和晶体结构三维形态分析。可进行离子束刻蚀、离子束沉积、电子束沉积;高分辨扫描电镜功能可对离子束加工试样进行实时观测。

Main attachments and configurations

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